Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4408-4411

  Hartono, H ^a   Chen, P ^b   Chua, S J ^a   Fitzgerald, E A ^a,c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Highly mismatched systems; InxGa1 xN layers; InN

Indexed keywords

CRYSTAL LATTICES; GALLIUM NITRIDE; GRAIN SIZE AND SHAPE; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS;

DROPLET FORMATION; EPILAYERS; LATTICE MISMATCH;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33847118162     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.112     Document Type: Article

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