Impact of mixing of disturbed bonding states on time-dependent dielectric breakdown in SiO2 thin films

Applied Physics Letters

Volumn 71, Issue 25, 1997, Pages 3721-3723

  McPherson, J W ^a   Mogul, H C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0142150354     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120493     Document Type: Article

References (12)

1. E. Anolick and G. Nelson, International Reliability Physics Proceedings (IEEE, Piscataway, NJ, 1979), p. 8.
2. D. Crook, International Reliability Physics Proceedings (IEEE, Piscataway, NJ, 1979), p. 1.
3. A. Berman, International Reliability Physics Proceedings (IEEE, Piscataway, NJ, 1981), p. 204.
4. J. W. McPherson and D. A. Baglee, International Reliability Physics Proceedings (IEEE, Piscataway, NJ, 1985), p. 1.
5. J. W. McPherson and D. A. Baglee, J. Electrochem. Soc. 132, 1903 (1985).
6. J. W. McPherson, International Reliability Physics Proceeding (IEEE, Piscataway, NJ, 1986), p. 12.
7. J. W. McPherson, V. Reddy, and H. C. Mogul, Appl. Phys. Lett. 71, 1101 (1997).
8. K. C. Boyko and D. L. Gerlach, International Reliability Physics Proceedings (IEEE, Piscataway, NJ, 1989), p. 7.
9. M. Kimura, International Reliability Physics Proceedings (IEEE, Piscataway, NJ, 1997), p. 190.
10. J. Suehle and P. Chaparala, IEEE Trans. Electron Devices 44, 801 (1997).
11. C. Helms and E. Poindexter, Rep. Prog. Phys. 57, 791 (1994).
12. C. Kittel, Introduction to Solid State Physics, Fourth Ed. (Wiley, New York, 1971), p. 457.