Characterization of bulk AlN crystals with positron annihilation spectroscopy

Journal of Crystal Growth

Volumn 310, Issue 17, 2008, Pages 3998-4001

  Tuomisto, F ^a   Maki J M ^a   Chemekova, T Yu ^b   Makarov, Yu N ^b   Avdeev, O V ^b   Mokhov, E N ^b   Segal, A S ^b   Ramm, M G ^c   Davis, S ^c   Huminic, G ^c   Helava, H ^c   Bickermann, M ^d   Epelbaum, B M ^d  

^a AALTO UNIVERSITY   (Finland)

^b N Crystals Ltd   (Russian Federation)

^c The Fox Group Inc   (United States)

^d UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

A1. Characterization; A1. Point defects; A2. Growth from vapor; B1. Nitrides; B2. Semiconducting aluminum compounds

Indexed keywords

ALUMINUM CLADDING; ALUMINUM COMPOUNDS; CRYSTAL DEFECTS; CRYSTALLOGRAPHY; CRYSTALS; ELECTRONS; LIGHT METALS; MAGNESIUM PRINTING PLATES; NITRIDES; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; POWDERS; SUPERCONDUCTING MATERIALS; VACANCIES;

A1. CHARACTERIZATION; A1. POINT DEFECTS; A2. GROWTH FROM VAPOR; ALUMINIUM NITRIDE; B1. NITRIDES; B2. SEMICONDUCTING ALUMINUM COMPOUNDS; BULK ALN; FREE STATES; HIGH TEMPERATURES; LOW TEMPERATURES; PHYSICAL VAPOR TRANSPORT; VACANCY DEFECTS;

POSITRONS;

ALUMINUM; CONCENTRATION; CRYSTALLIZATION; CRYSTALS; ELECTRONS; LATTICES; LIGHT METALS; NITRIDES; PRINTING PLATES; SPECTROSCOPY;

EID: 49449100458     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.013     Document Type: Article

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