Dominant intrinsic acceptors in GaN and ZnO

Physica Scripta T

Volumn T126, Issue , 2006, Pages 105-109

  Saarinen, K ^a   Hautakangas, S ^a   Tuomisto, F ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTOR DOPING; VACANCIES; ZINC OXIDE;

NEGATIVE DEFECTS; OXYGEN DOPING; VACANCY DEFECTS;

GALLIUM NITRIDE;

EID: 34248650781     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/2006/T126/024     Document Type: Conference Paper

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