Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 251-253

  Tuomisto, F ^a   Paskova, T ^b   Figge, S ^b   Hommel, D ^b   Monemar, B ^c  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF BREMEN   (Germany)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Characterization; A1. Point defects; A3. Hydride vapor phase epitaxy; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CONCENTRATION (PROCESS); DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; INTERFACES (MATERIALS); POSITRON ANNIHILATION SPECTROSCOPY; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY; NON-POLAR MATERIALS; SAPPHIRE INTERFACE; VACANCY DISTRIBUTION;

CRYSTAL DEFECTS;

EID: 33847335898     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.040     Document Type: Article

References (17)

1. Craven M.D., Wu F., Lim S.H., Speck J.S., and Denbaars S.P. Appl. Phys. Lett. 81 (2002) 1201
2. Haskell B.A., Wu F., Craven M.D., Matsuda S., Fini P.T., Fujii T., Fujito K., Denbaars S.P., Speck J.S., and Nakamura S. Appl. Phys. Lett. 83 (2003) 644
3. Paskova T., Paskov P.P., Valcheva E., Darakchieva V., Birch J., Kasic A., Arnaudov B., Tungasmita S., and Monemar B. Phys. Status Solidi (a) 201 (2004) 2265
4. Haskell B.A., Baker T.J., McLaurin M.B., Wu F., Fini P.T., Denbaars S.P., Speck J.S., and Nakamura S. Appl. Phys. Lett. 86 (2005) 111917
5. Haskell B.A., Chakraborty A., Wu F., Sasano H., Fini P.T., Denbaars S.P., Speck J.S., and Nakamura S. J. Electron. Mater. 34 (2005) 357
6. Paskova T., Darakchieva V., Paskov P.P., Birch J., Valcheva E., Persson P.O.A., Arnaudov B., Tungasmita S., and Monemar B. J. Crystal Growth 281 (2005) 55
7. Tuomisto F., Saarinen K., Lucznik B., Grzegory I., Teisseyre H., Suski T., Porowski S., Hageman P., and Likonen J. Appl. Phys. Lett. 86 (2005) 031915
8. Look D.C., Stutz C.E., Molnar R.J., Saarinen K., and Liliental-Weber Z. Solid State Commun. 117 (2001) 571
9. Sun X.L., Goss S.H., Brillson L.J., Look D.C., and Molnar R.J. J. Appl. Phys. 91 (2002) 6729
10. Oila J., Kivioja J., Ranki V., Saarinen K., Look D.C., Molnar R.J., Park S.S., Lee S.K., and Han J.Y. Appl. Phys. Lett. 82 (2003) 3433
11. Gogova D., Kasic A., Larsson H., Monemar B., Tuomisto F., Saarinen K., Dobos L., Pécz B., Gibart P., and Beaumont B. J. Appl. Phys. 96 (2004) 799
12. Tuomisto F., Saarinen K., Paskova T., Monemar B., Bockowski M., and Suski T. J. Appl. Phys. 99 (2006) 066105
13. Paskova T., Hommel D., Paskova P.P., Darakchieva V., Monemar B., Bockowski M., Suski T., Grzegory I., Tuomisto F., Saarinen K., Ashkenov N., and Schubert M. Appl. Phys. Lett. 88 (2006) 141909
14. Saarinen K., Hautojärvi P., and Corbel C. In: Stavola M. (Ed). Identification of Defects in Semiconductors (1998), Academic Press, New York 209
15. Hautakangas S., Ranki V., Makkonen I., Puska M.J., Saarinen K., Xu X., and Look D.C. Phys. Rev. B 73 (2006) 193301
16. Saarinen K., Suski T., Grzegory I., and Look D.C. Phys. Rev. B 64 (2001) 233201
17. R. Kroeger, private communication.