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Volumn 269, Issue 2-4, 2004, Pages 432-442
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Characterization of bulk AlN with low oxygen content
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Author keywords
A1.Impurities; A1.Point defects; A2.Growth from vapor; B1.Nitrides; B2.Semiconducting aluminum compounds
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Indexed keywords
ACTIVATION ENERGY;
ALUMINUM NITRIDE;
ELECTRIC CONDUCTIVITY;
LIGHT ABSORPTION;
PHONONS;
POLYCRYSTALLINE MATERIALS;
GROWTH FROM VAPOR;
INTRINSIC DEFECTS;
THERMAL ACTIVATION ENERGY;
CRYSTAL GROWTH;
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EID: 4344622134
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.05.071 Document Type: Article |
Times cited : (94)
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References (42)
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