Development of 4H-SiC LJFET-based power IC

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 1934-1945

  Zhang, Yongxi ^a   Sheng, Kuang ^a   Su, Ming ^a   Zhao, Jian H ^a   Alexandrov, Petre ^b   Li, Xueqing ^b   Fursin, Leonid ^b   Weiner, Maurice ^b  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

Author keywords

High temperature electronics; Junction fieldeffect transistor (JFET); Normally off; Power integrated circuits; Reduced surface electric field (RESURF) effect; Silicon carbide (SiC)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; NONMETALS; OPTICAL DESIGN; SILICON; TECHNOLOGY;

CIRCUIT DESIGNS; HIGH TEMPERATURES; HIGH-TEMPERATURE ELECTRONICS; IC FABRICATION; JUNCTION FIELDEFFECT TRANSISTOR (JFET); NORMALLY OFF; OUTPUT CAPACITANCE; POWER IC; POWER INTEGRATED CIRCUITS; REDUCED SURFACE ELECTRIC FIELD (RESURF) EFFECT; REDUCED SURFACE FIELD; ROOM TEMPERATURES; SILICON CARBIDE (SIC); SILICON CARBIDE DEVICES; TEMPERATURE DEPENDENCES;

SILICON CARBIDE;

EID: 49249134576     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926676     Document Type: Article

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