430-V 12.4-mΩ · cm2 normally off 4H-SiC lateral JFET

IEEE Electron Device Letters

Volumn 27, Issue 10, 2006, Pages 834-836

  Su, Ming ^a   Sheng, Kuang ^a   Li, Yuzhu ^a   Zhang, Yongxi ^a   Wu, Jian ^a   Zhao, Jian H ^a   Zhang, Jianhui ^b   Li, Larry X ^b  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

Author keywords

Implantation; Junction field effect transistor (JFET); Normally OFF; Silicon carbide (SiC); Vertical channel

Indexed keywords

BLOCKING VOLTAGES; DEEP TRENCHES; FABRICATED DEVICES; FIGURE OF MERITS; HIGH VOLTAGES; HIGH-VOLTAGE DEVICES; IMPLANTATION; JUNCTION FIELD-EFFECT TRANSISTOR (JFET); LATERAL DRIFTS; NORMALLY OFF; POWER SWITCHES; SPECIFIC ON RESISTANCES; VERTICAL CHANNEL;

ALUMINA; FIELD EFFECT TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MIXED CONVECTION; SEMICONDUCTING ALUMINUM COMPOUNDS;

SILICON CARBIDE;

EID: 34247617728     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.883057     Document Type: Article

References (6)

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