800 V 4H-SiC RESURF-type lateral JFETs

IEEE Electron Device Letters

Volumn 25, Issue 12, 2004, Pages 790-791

  Fujikawa, Kazuhiro ^a   Shibata, Kaoru ^a   Masuda, Takeyoshi ^a   Shikata, Shinichi ^a   Hayashi, Hideki ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

JFETs; Reduced surface field (RESURF); Silicon carbide (SiC)

Indexed keywords

ELECTRIC AUTOMOBILES; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; LITHOGRAPHY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

HYBRID AUTOMOBILES; LATERAL SWITCHING DEVICE; REDUCED SURFACE FIELD (RESURF);

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 10844269723     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.838058     Document Type: Article

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