1000-V 9.1-mΩ · cm2 normally off 4H-SiC lateral RESURF JFET for power integrated circuit applications

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 404-407

  Zhang, Yongxi ^a   Sheng, Kuang ^a   Su, Ming ^a   Zhao, Jian H ^a   Alexandrov, Petre ^b   Fursin, Leonid ^b  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

Author keywords

Junction field effect transistor (JFET); Normally off; Power integrated circuits; Reduced surface electric field (RESURF) effect; Silicon carbide (SiC)

Indexed keywords

ELECTRIC FIELD EFFECTS; POWER INTEGRATED CIRCUITS; SILICON CARBIDE;

LOGIC-INVERTER CIRCUITS; REDUCED-SURFACE ELECTRIC-FIELD EFFECT;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 34247604584     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895448     Document Type: Article

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