Drain current model including velocity saturation for symmetric double-gate MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 2173-2180

  Hariharan, Venkatnarayan ^a   Vasi, Juzer ^a   Rao, V Ramgopal ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Current; Double gate MOSFET (DGFET); Mobility; Modeling; MOSFETs; Velocity saturation

Indexed keywords

DRAIN CURRENT; NONMETALS; SILICON; SILICON CARBIDE; TECHNOLOGY; THERMAL NOISE;

CURRENT; DOUBLE-GATE MOSFET; DOUBLE-GATE MOSFET (DGFET); DOUBLE-GATE MOSFETS; DRAIN CURRENT MODELS; DRIFT-DIFFUSION TRANSPORT; ENGINEERING MODEL; INTEGRAL PART; MOBILITY; MODELING; MOSFETS; SILICON CARBIDE DEVICES; VELOCITY SATURATION;

MOSFET DEVICES;

EID: 49249088656     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926745     Document Type: Article

References (31)

1. P. M. Solomon, K. W. Guarini, Y. Zhang, K. Chan, E. C. Jones, G. M. Cohen, A. Krasnoperova, M. Ronay, O. Dokumaci, and H. J. Hovel, "Two gates are better than one," IEEE Circuits Devices Mag., vol. 19, no. 1, pp. 48-62, Jan. 2003.
2. E. J. Nowak, I. Allen, T. Ludwig, K. Kim, R. V. Joshi, C.-T. Chuang, K. Bernstein, and R. Puri, "Turning silicon on its edge," IEEE Circuits Devices Mag., vol. 20, no. 1, pp. 20-31, Jan./Feb. 2004.
3. G. Pei, W. Ni, A. V. Kammula, B. A. Minch, and E. C.-C. Kan, "A physical compact model of DG MOSFET for mixed-signal circuit applications - Part I: Model description," IEEE Trans. Electron Devices, vol. 50, no. 10, pp. 2135-2143, Oct. 2003.
4. M. V. Dunga, C. H. Lin, X. Xi, D. D. Lu, A. M. Niknejad, and C. Hu, "Modeling advanced FET technology in a compact model," IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 1971-1978, Sep. 2006.
5. Y. Taur, X. Liang, W. Wang, and H. Lu, "A continuous, analytic drain-current model for DG MOSFETs," IEEE Electron Device Lett., vol. 25, no. 2, pp. 107-109, Feb. 2004.
6. J. He, X. Xuemei, M. Chan, C. H. Lin, A. M. Niknejad, and C. Hu, "A non-charge-sheet based analytical model of undoped symmetric double-gate MOSFETs using SPP approach," in Proc. Int. Symp. Quality Electron. Des., 2004, pp. 45-50.
7. J. M. Sallese, F. Krummenacher, F. Pregaldiny, C. Lallement, A. Roy, and C. C. Enz, "A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism," Solid State Electron., vol. 49, no. 3, pp. 485-489, Mar. 2005.
8. A. S. Roy, J. M. Sallese, and C. C. Enz, "A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET," Solid State Electron., vol. 50, no. 4, pp. 687-693, Apr. 2006.
9. H. Lu and Y. Taur, "An analytic potential model for symmetric and asymmetric DG MOSFETs," IEEE Trans. Electron Devices, vol. 53, no. 5, pp. 1161-1168, May 2006.
10. A. Ortiz-Conde, F. J. G. Sanchez, and J. Muci, "Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs," Solid State Electron., vol. 49, no. 4, pp. 640-647, Apr. 2005.
11. J. He, F. Liu, J. Zhang, J. Feng, J. Hu, S. Yang, and M. Chan, "A carrier-based approach for compact modeling of the long-channel undoped symmetric double-gate MOSFETs," IEEE Trans. Electron Devices, vol. 54, no. 5, pp. 1203-1209, May 2007.
12. Z. Zhu, X. Zhou, S. C. Rustagi, G. H. See, S. Lin, G. Zhu, C. Wei, and J. Zhang, "Analytic and explicit current model of undoped double-gate MOSFETs," Electron. Lett., vol. 43, no. 25, pp. 1464-1466, Dec. 2007.
13. M. Wong and X. Shi, "Analytical I-V relationship incorporating field-dependent mobility for a symmetrical DG MOSFET with an undoped body," IEEE Trans. Electron Devices, vol. 53, no. 6, pp. 1389-1397, Jun. 2006.
14. C. G. Sodini, P.-K. Ko, and J. L. Moll, "The effect of high fields on MOS device and circuit performance," IEEE Trans. Electron Devices vol. ED-31, no. 10, pp. 1386-1393, Oct. 1984.
15. G. D. J. Smit, A. J. Scholten, G. Curatola, R. van Langevelde, G. Gildenblat, and D. B. M. Klaassen, "PSP-based scalable compact FinFET model," in Proc. NSTI-Nanotech, 2007, vol. 3, pp. 520-525.
16. G. Gildenblat, X. Li, W. Wu, H. Wang, A. Jha, R. van Langevelde, G. D. J. Smit, A. J. Scholten, and D. B. M. Klaassen, "PSP: An advanced surface-potential-based MOSFET model for circuit simulation," IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 1979-1993, Sep. 2006.
17. D. M. Caughey and R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field," Proc. IEEE, vol. 55, no. 12, pp. 2192-2193, Dec. 1967.
18. Y. Taur and T. Ning, Fundamentals of Modern VLSI Devices. Cambridge, U.K.: Cambridge Univ. Press, 2003.
19. K. Joardar, K. K. Gullapalli, C. C. McAndrew, M. E. Burnham, and A. Wild, "An improved MOSFET model for circuit simulation," IEEE Trans. Electron Devices, vol. 45, no. 1, pp. 134-148, Jan. 1998.
20. G. Gildenblat, H. Wang, T.-L. Chen, X. Gu, and X. Cai, "SP: An advanced surface-potential-based compact MOSFET model," IEEE J. Solid-State Circuits, vol. 39, no. 9, pp. 1394-1406, Sep. 2004.
21. C. Canali, G. Majni, R. Minder, and G. Ottaviani, "Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature," IEEE Trans. Electron Devices, vol. ED-22, no. 11, pp. 1045-1047, Nov. 1975.
22. G. Pei, J. Kedzierski, P. Oldiges, M. Ieong, and E. C.-C. Kan "Fin-FET design considerations based on 3-D simulation and analytical modeling," IEEE Trans. Electron Devices, vol. 49, no. 8, pp. 1411-1419, Aug. 2002.
23. Scilab 4.x. [Online]. Available: http://www.scilab.org
24. R. van Langevelde, A. J. Scholten, and D. B. M. Klaassen, Physical Background of MOS Model 11, Level 1101, Amsterdam, The Netherlands: Koninklijke Philips Electron. N.V., Nat. Lab. Unclassified Rep. 2003/ 00239. [Online]. Available: http://www.semiconductors.philips.com/ Philips_Models/
25. P. K. Ko, R. S. Muller, and C. Hu, "A unified model for hot-electron currents in MOSFETs," in IEDM Tech. Dig., 1981, pp. 600-603.
26. Synopsys Sentaurus Device Manual, Version Y-2006.06, Synopsis Inc., Jun. 2006. [Online]. Available: http://www.synopsys.com
27. G. D. J. Smit, A. J. Scholten, D. B. M. Klaassen, R. van Langevelde, X. Li, W. Wu, and G. Gildenblat, PSP 102.2, Oct. 2007. [Online]. Available: http://pspmodel.asu.edu/downloads/psp1022_summary.pdf
28. Z. Zhu, X. Zhou, K. Chandrasekaran, S. C. Rustagi, and G. H. See, "Explicit compact surface-potential and drain-current models for generic asymmetric double-gate metal-oxide-semiconductor field-effect transistors," Jpn. J. Appl. Phys., vol. 46, no. 4B, pp. 2067-2072, 2007.
29. B. Yu, H. Lu, M. Liu, and Y. Taur, "Explicit continuous models for double-gate and surrounding-gate MOSFETs," IEEE Trans. Electron Devices, vol. 54, no. 10, pp. 2715-2722, Oct. 2007.
30. G. Mugnaini and G. Iannaccone, "Physics-based compact model of nanoscale MOSFETs - Part I: Transition from drift-diffusion to ballistic transport," IEEE Trans. Electron Devices, vol. 52, no. 8, pp. 1795-1801, Aug. 2005.
31. R. Thakker, N. Gandhi, M. Patil, and K. Anil, "Parameter extraction for PSP MOSFET model using particle swarm optimization," in Proc. IWPSD 2007, pp. 130-133.