Analytic and explicit current model of undoped double-gate MOSFETs

Electronics Letters

Volumn 43, Issue 25, 2007, Pages 1464-1466

  Zhu, Z ^a   Zhou, X ^a   Rustagi, S C ^b   See, G H ^a   Lin, S ^a   Zhu, G ^a   Wei, C ^a   Zhang, J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; MATHEMATICAL MODELS; NUMERICAL METHODS; SURFACE POTENTIAL;

DRAIN-CURRENT EQUATION; SATURATION REGION;

MOSFET DEVICES;

EID: 36949019138     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20072682     Document Type: Article

References (3)

1. Taur, Y., Liang, X., Wang, W., and Lu, H.: ' A countinuous, analytic drain-current model for DG MOSFETs ', IEEE Electron Device Lett., 2004, 25, (2), p. 107-109 0741-3106
2. Zhu, Z.M., Zhou, X., Chandrasekaran, K., Rustagi, S.C., and See, G.H.: ' Explicit compact surface-potential and drain-current models for generic asymmetric double-gate MOSFETs ', Jpn. J. Appl. Phys., 2007, 46, (4B), p. 2067-2072 0021-4922
3. Zhu, Z.M., Zhou, X., Chandrasekaran, K., See, G.H., and Rustagi, S.C.: ' A continuous, explicit drain-current model for asymmetric undoped double-gate MOSFETs ', Proc. 2006 Int. Conf. on Solid State Devices and Materials (SSDM2006), Japan, September, 2006, Pacifico Yokohama, p. 1042-1043