Analytical I-V relationship incorporating field-dependent mobility for a symmetrical DG MOSFET with an undoped body

IEEE Transactions on Electron Devices

Volumn 53, Issue 6, 2006, Pages 1389-1397

  Wong, Man ^a   Shi, Xuejie ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Current voltage (I V) relationship; Double gate (DG); Field effect transistor (FET)

Indexed keywords

APPROXIMATION THEORY; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRIC FIELDS; ESTIMATION; GATES (TRANSISTOR); MOS CAPACITORS; POISSON EQUATION;

CURRENT-VOLTAGE RELATIONSHIP; DOUBLE-GATE; ELECTRIC-FIELD DISTRIBUTION; GRADUAL-CHANNEL APPROXIMATION;

MOSFET DEVICES;

EID: 33744786002     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.873880     Document Type: Article

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