Simulation of electron transport in nanoscale independent-gate double-gate devices using a full 2D green's function approach

Journal of Computational and Theoretical Nanoscience

Volumn 5, Issue 6, 2008, Pages 1120-1127

  Autran, Jean Luc ^a,b   Munteanu, Daniela ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b INSTITUT UNIVERSITAIRE DE FRANCE   (France)

Author keywords

Ballistic transport; Double Gate transistor; Independent gate devices; Non Equilibrium Green's Functions (NEGF); Real space approach(2D)

Indexed keywords

BALLISTICS; NANOTRANSISTORS;

BALLISTIC TRANSPORTS; DOUBLE GATE TRANSISTOR; INDEPENDENT-GATE DEVICES; NON-EQUILIBRIUM GREEN'S FUNCTION; REAL-SPACE APPROACH(2D);

ELECTRON TRANSPORT PROPERTIES;

EID: 49049116537     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2008.2546     Document Type: Article

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