Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green's function formalism

Solid-State Electronics

Volumn 48, Issue 4, 2004, Pages 567-574

  Bescond, M ^a,b   Autran, J L ^b   Munteanu, D ^b   Lannoo, M ^a  

^a Maison des Technologies   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Atomic modeling; Ballistic transport; Double gate devices; Green's function formalism; Quantum tunneling; Tight binding

Indexed keywords

COMPUTER SIMULATION; ELECTRON REFLECTION; ELECTRON TUNNELING; GREEN'S FUNCTION; HAMILTONIANS; POISSON EQUATION; QUANTUM THEORY;

ATOMIC MODELING; BALLISTIC TRANSPORT; DOUBLE-GATE DEVICES; GREEN'S FUNCTION FORMALISM; QUANTUM TUNNELING; TIGHT-BINDING;

MOSFET DEVICES;

EID: 0442296353     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.09.025     Document Type: Conference Paper

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