Morphological, structural, and mechanical characterizations of InGaN thin films deposited by MOCVD

Journal of Alloys and Compounds

Volumn 463, Issue 1-2, 2008, Pages 533-538

  Yang, Ping Feng ^a,b   Jian, Sheng Rui ^c   Lai, Yi Shao ^a   Yang, Chu Shou ^d   Chen, Rong Sheng ^b  

^a ADVANCED SEMICONDUCTOR ENGINEERING INC   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c I SHOU UNIVERSITY   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

AFM; InGaN; MOCVD; Nanoindentation; XRD

Indexed keywords

ATOMIC FORCE MICROSCOPY; CORUNDUM; CRYSTALLINE MATERIALS; FRICTION; IMAGING TECHNIQUES; INDIUM; ION BEAM ASSISTED DEPOSITION; MECHANICAL PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; MICROSCOPIC EXAMINATION; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; PHASE SEPARATION; SCANNING PROBE MICROSCOPY; SEPARATION; SOLIDS; SURFACE MORPHOLOGY; SURFACE PROPERTIES; SURFACE ROUGHNESS; SURFACE STRUCTURE; THICK FILMS; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

ATOMIC FORCE MICROSCOPY (AFM); CHEMICAL; CRYSTALLINE STRUCTURES; DEPOSITION TEMPERATURE (TD); IN COMPOSITION; MECHANICAL CHARACTERIZATIONS; METAL ORGANIC (MO); NANO INDENTATION TECHNIQUES; NANO MECHANICAL PROPERTIES; NO PHASE; SAPPHIRE SUBSTRATES; X RAY DIFFRACTION (XRD); XRD MEASUREMENTS;

VAPOR DEPOSITION;

EID: 48949118363     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2007.09.140     Document Type: Article

References (44)

1. Khan M.A., Bhattarai A., Kuznia J.N., and Olson D.T. Appl. Phys. Lett. 63 (1993) 1214-1215
2. Nakamura S., Senoh M., Iwasa N., Nagahama S., Yamada T., and Mukai T. Jpn. J. Appl. Phys. 34 (1995) L1332-L1335
3. In: Gil B. (Ed). Group III Nitride Semiconductor Compounds: Physics and Applications (1998), Oxford University Press, New York
4. Kavouras P., Komninoua Ph., and Karakostas Th. Thin Solid Films 515 (2007) 3011-3018
5. Chichibu S., Azuhata T., Sota T., and Nakamura S. Appl. Phys. Lett. 69 (1996) 4188-4190
6. Narukawa Y., Kawakami Y., Fujita S., Fujita S., and Nakamura S. Phys. Rev. B 55 (1997) R1938-R1941
7. Djemia P., Dugautier C., Chauveau T., Dogheche E., De Barros M.I., and Vandenbulcke L. J. Appl. Phys. 90 (2001) 3771-3779
8. Hurley D.C., Tewary V.K., and Richards A.J. Thin Solid Films 398/399 (2001) 326-330
9. Chowdhury S., and Laugier M.T. Nanotechnology 15 (2004) 1017-1022
10. Oliver W.C., and Pharr G.M. J. Mater. Res. 7 (1992) 1564-1583
11. Nowak R., Pessa M., Suganuma M., Leszczynski M., Grzegory I., Porowski S., and Yoshida F. Appl. Phys. Lett. 75 (1999) 2070-2072
12. Papakonstantinou P., Lemoine P., McLaughlin J., MacKay K., Dodd P.M., Pollard R.J., and Atkinson R. J. Appl. Phys. 87 (2000) 6170-6172
13. Jian S.-R., Fang T.-H., and Chuu D.-S. J. Electron. Mater. 32 (2003) 496-500
14. Bhushan B., and Li X. Int. Mater. Rev. 48 (2003) 125-164
15. Chien C.-H., Jian S.-R., Wang C.-T., Juang J.-Y., Huang J.C., and Lai Y.-S. J. Phys. D: Appl. Phys. 40 (2007) 3985-3990
16. Coleman V.A., Bradby J.E., Jagadish C., Munroe P., Heo Y.W., Pearton S.J., Norton D.P., Inoue M., and Yano M. Appl. Phys. Lett. 86 (2005) 203105
17. Navamathavan R., Kim K.-K., Hwang D.-K., Park S.-J., Lee T.G., Kim G.-S., and Hahn J.-H. Mater. Lett. 61 (2007) 2443-2445
18. Yang H., and Yoshida T. Surf. Coat. Technol. 200 (2005) 984-987
19. Fujikane M., Setoyama D., Nagao S., Nowak R., and Yamanaka S. J. Alloys Compd. 431 (2007) 250-255
20. Le Bourhis E., and Patriarche G. Prog. Cryst. Growth Char. Mater. 47 (2003) 1-43
21. Qin Z., Chen Z., Tong Y., Lu S., and Zhang G. Appl. Phys. A 74 (2002) 655-658
22. Chen Z.Z., Qin Z.X., Hu X.D., Yu T.J., Yang Z.J., Tong Y.Z., Ding X.M., and Zhang G.Y. Physica B 344 (2004) 292-296
23. Zhou S.Q., Wu M.F., Hou L.N., Yao S.D., Ma H.J., Nie R., Tong Y.Z., Yang Z.J., Yu T.J., and Zhang G.Y. J. Cryst. Growth 263 (1994) 35-39
24. Vook R.W. In: Matthews J.W. (Ed). Epitaxial Growth, Part A (1975), Academic Press, New York p. 339
25. Cullity B.D. Elements of X-ray Diffraction. 2nd ed. (1978), Addison-Wesley, Reading, MA
26. Miyoshi K., and Chung Y.W. Surface Diagnostics in Tribology: Fundamental Principles and Applications (1993), World Scientific Publishing, Singapore
27. Cáceres D., Vergara I., González R., Monroy E., Calle F., Muñoz E., and Omnès F. J. Appl. Phys. 86 (1999) 6773-6778
28. Wang X., Kolitsch A., and Möller W. Appl. Phys. Lett. 71 (1997) 1951-1953
29. Pharr G.M., Oliver W.C., and Brotzen F.R. J. Mater. Res. 7 (1992) 613-617
30. Johnson K.L. Contact Mechanics (1985), Cambridge University Press, Cambridge
31. Lorenz D., Zeckzer A., Hilpert U., Grau P., Johansen H., and Leipner H.S. Phys. Rev. B 67 (2003) 172101
32. Wen H., Wang X., and Li L. J. Appl. Phys. 100 (2006) 084315
33. Nix W.D., and Gao H. J. Mech. Phys. Solids 46 (1998) 411-425
34. Elmustafa A.A., and Stone D.S. Acta Mater. 50 (2002) 3641-3650
35. Gerberich W.W., Tymiak N.I., Grunlan J.C., Horstemeyer M.F., and Baskes M.I. J. Appl. Mech. ASME 69 (2002) 433-442
36. Gane N., and Cox J.M. Phil. Mag. 22 (1970) 881-891
37. Yost F.G. Metall. Trans. A 14 (1983) 947-952
38. Ma Q., and Clarke D.R. J. Mater. Res. 10 (1995) 853-863
39. Fleck N.A., and Hutchinson J.W. J. Mech. Phys. Solids 49 (2001) 2245-2271
40. Johnson K.L. J. Mech. Phys. Solids 18 (1970) 115-126
41. Seitz F. Phys. Rev. 79 (1950) 723-724
42. Bradby J.E., Kucheyev S.O., Williams J.S., Wong-Leung J., Swain M.V., Munroe P., Li G., and Phillips M.R. Appl. Phys. Lett. 80 (2002) 383-385
43. Cheong W.C.D., and Zhang L.C. Nanotechnology 11 (2000) 173-180
44. Li J., Van Vliet K.J., Zhu T., Yip S., and Suresh S. Nature 418 (2002) 307-310