Indentation-induced damage in GaN epilayers

Applied Physics Letters

Volumn 80, Issue 3, 2002, Pages 383-385

  Bradby, J E ^a   Kucheyev, S O ^a   Williams, J S ^a   Wong Leung, J ^a   Swain, M V ^b   Munroe, P ^c   Li, G ^d   Phillips, M R ^e  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

^d Ledex Corporation   (Taiwan)

^e UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANES; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DAMAGED REGION; DEFORMATION MECHANISM; ELASTIC-PLASTIC; GAN EPILAYERS; MAXIMUM LOAD; MECHANICAL DEFORMATION; MONOCHROMATIC IMAGING; MULTIPLE SLIPS; PRESSURE-INDUCED PHASE TRANSFORMATIONS; SAPPHIRE SUBSTRATES; SELECTED-AREA DIFFRACTION PATTERNS; SPHERICAL INDENTATIONS; WURTZITE GAN;

EPILAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

DEFORMATION;

EID: 79956019122     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1436280     Document Type: Article

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