Mechanical properties of ZnO epitaxial layers grown on a- and c-axis sapphire

Applied Physics Letters

Volumn 86, Issue 20, 2005, Pages 1-3

  Coleman, V A ^a   Bradby, J E ^a   Jagadish, C ^a   Munroe, P ^b   Heo, Y W ^c   Pearton, S J ^c   Norton, D P ^c   Inoue, M ^d   Yano, M ^d  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^d OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK COUNTERPART; EPITAXIAL LAYERS GROWTH; NANOINDENTATION; SEMICONDUCTOR PROCESSING;

EPITAXIAL GROWTH; LUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DEVICES; SIGNAL PROCESSING; SINGLE CRYSTALS; THERMAL EFFECTS;

ZINC OXIDE;

EID: 20844455287     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1929874     Document Type: Article

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