Study of photoluminescence and absorption in phase-separation InGaN films

Physica B: Condensed Matter

Volumn 344, Issue 1-4, 2004, Pages 292-296

  Chen, Z Z ^a   Qin, Z X ^a   Hu, X D ^a   Yu, T J ^a   Yang, Z J ^a   Tong, Y Z ^a   Ding, X M ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

InGaN; Phase separation; Photoluminescence excitation; Quantum dots

Indexed keywords

ABSORPTION; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; PHASE SEPARATION; PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; TERNARY SYSTEMS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

INGAN; PHOTOLUMINESCENCE EXCITATION; RADIATIVE RECOMBINATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0742320637     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.10.008     Document Type: Article

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