Plastic deformation of III-V semiconductors under concentrated load

Progress in Crystal Growth and Characterization of Materials

Volumn 47, Issue 1, 2003, Pages 1-43

  Le Bourhis, Eric ^a   Patriarche, Gilles ^b  

^a UNIVERSITÉ DE POITIERS   (France)

^b UNIV PARIS SUD   (France)

Author keywords

Compliant substrate; Epitaxy; Indentation; Plasticity; Pop in; Semiconductors

Indexed keywords

BEARING CAPACITY; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ELASTOPLASTICITY; EPITAXIAL GROWTH; HARDNESS; HETEROJUNCTIONS; INDENTATION; OPTOELECTRONIC DEVICES; PLASTIC FLOW; PLASTICITY; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; STRAIN; YIELD STRESS;

COMPLIANT SUBSTRATES; III-V SEMICONDUCTORS; NANOINDENTATION; POP-IN; STRAIN FIELDS;

PLASTIC DEFORMATION;

EID: 10444285112     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.pcrysgrow.2004.09.001     Document Type: Article

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