Enhanced performances of quantum dot lasers operating at 1.3 μm

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 14, Issue 4, 2008, Pages 1188-1196

  Salhi, Abdelmajid ^a   Rainò, Gabriele ^b   Fortunato, Laura ^b   Tasco, Vittorianna ^b   Visimberga, Giuseppe ^c   Martiradonna, Luigi ^d   Todaro, Maria Teresa ^b   De Giorgi, Milena ^b   Cingolani, Roberto ^b,e   Trampert, Achim ^f   De Vittorio, Massimo ^b,g   Passaseo, Adriana ^b  

^a KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^e ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

^f PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^g UNIVERSITY OF SALENTO   (Italy)

Author keywords

Modal gain; Quantum dots (QDs); Semiconductor laser; Threshold current

Indexed keywords

CURRENT DENSITY; LASERS; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WIRES;

AREAL DENSITIES; DENSITY OF STATES; INHOMOGENEOUS BROADENING; LASER DEVICES; MODAL GAIN; QD LASERS; QD LAYERS; QUANTUM DOT LASERS; QUANTUM DOTS; QUANTUM DOTS (QDS); QUANTUM WELLS; SEMICONDUCTOR LASER; THRESHOLD CURRENT; TRANSPARENCY CURRENT DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 48949099860     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.916182     Document Type: Article

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