High-performance directly modulated 1.3-μm undoped InAs-InGaAs quantum-dot lasers

IEEE Photonics Technology Letters

Volumn 19, Issue 4, 2007, Pages 191-193

  Todaro, Maria Teresa ^a   Salhi, A ^a   Fortunato, L ^a   Cingolani, R ^a   Passaseo, A ^a   De Vittorio, M ^a   Della Casa, P ^b   Ghiglieno, F ^b   Bianco, L ^b  

^a NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^b BROADCOM CORPORATION   (United States)

Author keywords

In(Ga)As; Modulation; Quantum dots (QDs); Semiconductor lasers

Indexed keywords

DOPING (ADDITIVES); MODULATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT LASERS; TUNNELLING INJECTION;

SEMICONDUCTOR LASERS;

EID: 33847624183     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.890045     Document Type: Article

References (12)

1. G. Park, O. B. Shchekin, D. L. Huffaker, and D. G. Deppe, "Low-threshold oxide-confined 1.3-μm quantum-dot lasers," IEEE Photon. Technol. Lett., vol. 12, no. 3, pp. 230-232, Mar. 2000.
2. R. Paoletti, M. Agretsi, D. Bertone, L. Bruschi, A. Buccieri, R. Campi, C. Dorigoni, P. Gotta, M. Liotti, G. Magnetti, P. Montangero, G. Morello, C. Rigo, E. Riva, D. Soderstrom, S. Stano, P. Valenti, M. Vallone, and M. Meliga, "High reliability and high yield 1300 nm InGaA1As directly modulated ridge waveguide Fabry-Perot lasers, operating at 10 Gb/s, up to 110 °C, with constant current swing," in Proc. Optical Fiber Conf., Anaheim, CA, 2005, Postdeadline paper, PDP15.
3. M. Ishida, N. Hatori, T. Akiyama, K. Otsubo, Y. Nakata, H. Ebe, M. Sugawara, and Y. Arakawa, "Photon lifetime dependence of modulation efficiency and K factor in 1.3 μm self-assembled InAs/GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth," Appl. Phys. Lett., vol. 85, pp. 4145-4147, 2004.
4. D. G. Deppe, H. Huang, and O. B. Shchekin, "High temperature performance of self organised quantum dot laser with stacked p-doped active region," Electron. Lett., vol. 38, pp. 712-713, 2002.
5. -1 signal-rigenerative amplifiers," J. Phys. D: Appl. Phys., vol. 38, pp. 2126-2134, 2005.
6. S. Fathpour, Z. Mi, and P. Bhattacharya, "High-speed quantum dot lasers," J. Phys. D: Appl. Phys., vol. 38, pp. 2103-2111, 2005.
7. D. G. Deppe, H. Huang, and O. B. Shchekin, "Modulation characteristics of quantum-dot lasers: The influence of p-type doping and the electronic density of states on obtaining high speed," IEEE J. Quantum Electron., vol. 38, no. 12, pp. 1587-1593, Dec. 2002.
8. H. Su and L. F. Lester, "Dynamic properties of quantum dot distributed feedback lasers: High speed, linewidth and chirp," J. Phys. D: Appl. Phys., vol. 38, pp. 2112-2118, 2005.
9. A. Salhi, L. Martiradonna, G. Visimberga, V. Tasco, L. Fortunato, M. T. Todaro, R. Cingolani, A. Passaseo, and M. De Vittorio, "High-modal gain 1300-nm In(Ga)As-GaAs quantum-dot lasers," IEEE Photon. Technol. Lett., vol. 18, no. 16, pp. 1735-1737, Aug. 15, 2006.
10. A. Salhi, L. Fortunato, L. Martiradonna, R. Cingolani, M. De Vittorio, and A. Passaseo, "Enhanced modal gain of multi-layer InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm," J. Appl. Phys., to be published.
11. P. G. Eliseev, H. Li, G. T. Liu, A. Stintz, T. C. Newell, L. F. Lester, and K. Malloy, "Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers," IEEE J. Sel. Topics Quantum Electron., vol. 7, no. 2, pp. 135-142, Mar./Apr. 2001.
12. H. Chen, Z. Zou, O. B. Shchekin, and D. G. Deppe, "InAs quantum-dot lasers operating near 1.3 μm with high characteristic temperature for continuous-wave operation," Electron. Lett., vol. 36, pp. 1703-1704, 2000.