High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers

Semiconductor Science and Technology

Volumn 20, Issue 5, 2005, Pages 340-342

  Mikhrin, S S ^a   Kovsh, A R ^a   Krestnikov, I L ^a   Kozhukhov, A V ^a   Livshits, D A ^a   Ledentsov, N N ^a   Shernyakov, Yu M ^b   Novikov, I I ^b   Maximov, M V ^b   Ustinov, V M ^b   Alferov, Zh I ^b  

^a NL Nanosemiconductor GmbH   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HEAT SINKS; HIGH TEMPERATURE EFFECTS; RELIABILITY; SEMICONDUCTOR LASERS;

DIFFERENTIAL EFFICIENCY; OUTPUT POWER; TEMPERATURE-INSENSITIVE THRESHOLD;

SEMICONDUCTOR QUANTUM DOTS;

EID: 24144498705     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/5/002     Document Type: Article

References (7)

1. Kovsh A R et al 2002 InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency Electron. Lett. 38 1104-6
2. Lott J A, Ledentsov N N, Kovsh A R, Ustinov V M and Bimberg D 2003 Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 μm vertical cavity surface emitting lasers Proc. LEOS 2003 16th Annu. Meeting of the IEEE vol 2 pp 499-500
3. Takahashi T and Arakawa Y 1988 Theoretical analysis of gain and dynamic properties of quantum-well box lasers Optoelectron.-Devices Technol. 3 155-62
4. Belenky G L, Reynolds C L Jr, Kazarinov R F, Swaminathan V, Luryi S L and Lopata J 1996 Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers IEEE J. Quantum Electron. 32 1450-5
5. Morton P A, Logan R A, Tanbun-Ek T, Sciortino P F Jr, Sergent A M, Montgomery R K and Lee B T 1992 25 GHz bandwidth 1.55 μm GaInAsP p-doped strained multiquantum-well lasers Electron. Lett. 28 2156-7
6. Shchekin O B and Deppe D G 2002 The role of p-type doping and the density of states on the modulation response of quantum dot lasers Appl. Phys. Lett. 80 2758-60
7. Shchekin O B, Ahn J and Deppe D G 2002 High temperature performance of a self-organized quantum dot laser with a stacked p-doped active region Electron. Lett. 38 712-3