InAs quantum dot lasers with extremely low threshold current density (7 A/cm2/layer)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 33-36, 2005, Pages

  Shimizu, Hitoshi ^a   Saravanan, Shanmugam ^a   Yoshida, Junji ^a   Ibe, Sayoko ^b   Yokouchi, Noriyuki ^b  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^b FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

InAs; Laser; Molecular beam epitaxy; Multilayer; Quantum dot; Threshold current density

Indexed keywords

CURRENT DENSITY; GROUND STATE; MIRRORS; OSCILLATIONS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS;

LASING WAVELENGTH; QUANTUM DOT LASERS; ROOM TEMPERATURE; THRESHOLD CURRENT DENSITY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 31544450793     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1103     Document Type: Article

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