Temperature-insensitive eye-opening under 10-Gb/s modulation of 1.3-μm P-doped quantum-dot lasers without current adjustments

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 8 B, 2004, Pages

  Otsubo, Koji ^a,b   Hatori, Nobuaki ^c,d   Ishida, Mitsuru ^c,d   Okumura, Shigekazu ^a   Akiyama, Tomoyuki ^a,b   Nakata, Yoshiaki ^a,b   Ebe, Hiroji ^c,d   Sugawara, Mitsuru ^c,d   Arakawa, Yasuhiko ^c,d,e  

^a FUJITSU LABORATORIES LTD   (Japan)

^b Optoelectronic Industry and Technology Development Association   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

Author keywords

Characteristic temperature; Direct modulation; P doped layers; Quantum dot lasers

Indexed keywords

BANDWIDTH; CURRENT DENSITY; DOPING (ADDITIVES); FREQUENCY MODULATION; FREQUENCY RESPONSE; LASERS; MOLECULAR BEAM EPITAXY; NATURAL FREQUENCIES;

CHARACTERISTIC TEMPERATURE; DIRECT MODULATION; DOPED LASERS; QUANTUM DOT LASERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 6344289296     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1124     Document Type: Article

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