Two-trap-assisted tunneling model for post-breakdown I - V characteristics in ultrathin silicon dioxide

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 1, 2006, Pages 75-80

  Wu, You Lin ^a   Lin, Shi Tin ^a  

^a NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

Atomic force microscopy (AFM); Dielectric breakdown; Metal oxide semiconductor (MOS) devices

Indexed keywords

DIELECTRIC BREAKDOWN; HARD BREAKDOWN (HBD); METAL-OXIDE- SEMICONDUCTOR (MOS) DEVICES; TWO-TRAP-ASSISTED TUNNELING (TTAT) MODEL;

ATOMIC FORCE MICROSCOPY; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL;

SILICA;

EID: 33645838848     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.870351     Document Type: Article

References (23)

1. S.-H. Lee, B.-J. Cho, J.-C. Kim, and S.-H. Choi, "Quasi breakdown of ultrathin gate oxide under high field stress," in IEDM Tech. Dig., San Francisco, CA, 1994, pp. 605-608.
2. J. C. Lee, I. C. Chen, and C. Hu, "Modeling and characterization of gate oxide reliability," IEEE Trans. Electron Devices, vol. 35, no. 12, pp. 2268-2278, Dec. 1988.
3. R. S. Scott, N. A. Dumin, T. W. Hunghes, D. J. Dumin, and B. T. Moore, "Properties of high-voltage stress generated traps in thin silicon oxide," IEEE Trans. Electron Devices, vol. 43, no. 7, pp. 1133-1143, Jul. 1996.
4. M.-J. Chen, T.-K. Kang, C.-H. Liu, Y. J. Chang, and K.-F. Fu, "Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides," Appl. Phys. Lett., vol. 77, no. 4, pp. 555-557, Jul. 2000.
5. 2 films," IEEE Trans. Electron Devices, vol. 35, no. 12, pp. 2259-2267, Dec. 1988.
6. M. Depas, T. Nigam, and M. M. Heyns, "Soft breakdown of ultra-thin gate oxide layers," IEEE Trans. Electron Devices, vol. 43, no. 9, pp. 1499-1504, Sep. 1996.
7. J. S. Suehle, B. Zhu, Y. Chen, and J. B. Bernstein, "Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides," Microelectron. Reliab., vol. 45, no. 3-5, pp. 419-426, Feb. 2005.
8. 2-Si capacitors: Dependence on oxide thickness," J. Appl Phys., vol. 86, no. 11, pp. 6382-6391, Dec. 1999.
9. 2 films," Thin Solid Films, vol. 185, no. 2, pp. 347-362, Mar. 1990.
10. E. S. Daniel, J. T. Jones, O. J. Marsh, and T. C. McGill, "Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 15, no. 4, pp. 1089-1096, 1997.
11. H. Watanabe, K. Fujita, and M. Ichkawa, "Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy," Appl. Phys. Lett., vol. 72, no. 16, pp. 1987-1989, Apr. 1998.
12. 2," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 14, no. 4, pp. 2864-2871, 1996.
13. H. J. Wen and R. Ludeke, "Localized degradation studies of ultrathin gate oxide," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 16, no. 3, pp. 1735-1740, 1998.
14. 2 gate oxides using atomic force microscopy," Appl. Phys. Lett., vol. 62, no. 7, pp. 786-788, Feb. 1993.
15. S. J. O'Shea, R. M. Atta, M. P. Murrell, and M. E. Welland, "Conducting atomic force microscopy study of silicon dioxide breakdown," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 13, no. 5, pp. 1945-1952, 1995.
16. T. Yasue, Y. Yoshida, H. Koyama, T. Kato, and T. Nishioka, "Dielectric breakdown of silicon oxide studied by scanning probe microscopy," J. Vac. Sci. Technol. B, Mlcroelectron. Process. Phenom., vol. 15, no. 6, pp. 1884-1888, 1997.
17. 2 films," in Proc. Int. Workshop Gate Insulator, Tokyo, Japan, 2001, pp. 124-126.
18. 2 films at a nanometer scale using a conductive atomic force microscope," J. Appl. Phys., vol. 91, no. 4, pp. 2071-2079, Feb. 2002.
19. 2 gate oxide reliability using C-AFM,"IEEE Trans. Nanotechnol., vol. 3, no. 1, pp. 55-60, Mar. 2004.
20. 2/Si structures," Solid State Electron., vol. 38, no. 8, pp. 1465-1471, Aug. 1995.
21. 2 films," IEEE Trans. Electron Devices, vol. 45, no. 7, pp. 1554-1560, Jul. 1998.
22. D. Ielmini, A. S. Spinelli, A. L. Lacaita, and A. Modelli, "A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in flash memories," Microelectron. Eng., vol. 59, no. 1, pp. 189-195, Nov. 2001.
23. 2 gate oxides," in IEDM Tech. Dig., San Francisco, CA, 2000, pp. 533-536.