Effect of N2 anneal on thin HfO2 layers studied by conductive atomic force microscopy

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 174-179

  Petry J ^a,b   Vandervorst, W ^a,b   Blasco, X ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Anneal; Conductive atomic force microscopy; HfO2; High k dielectric; Weak spots

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; CURRENT DENSITY; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOS DEVICES; NITROGEN; PERMITTIVITY; POLYSILICON; SILICA;

THERMAL ANNEALING; WEAK SPOTS;

THIN FILMS;

EID: 1642634438     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.032     Document Type: Conference Paper

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