Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope

Nanotechnology

Volumn 16, Issue 9, 2005, Pages 1506-1511

  Blasco, X ^a   Porti, M ^a   Nafria M ^a   Aymerich, X ^a   Petry J ^b   Vandervorst, W ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MICROELECTRONICS; MOS DEVICES; PERMITTIVITY; SILICA; SILICATES; ZIRCONIA;

CONDUCTIVE ATOMIC FORCE MICROSCOPE (CAFM); ELECTRICAL CHARACTERIZATION; GATE DIELECTRICS; GATE STACKS;

GATES (TRANSISTOR);

EID: 23444433598     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/9/016     Document Type: Article

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