Reproducible defect etching of SiC single crystals

Journal of Crystal Growth

Volumn 270, Issue 1-2, 2004, Pages 1-6

  Siche, D ^a   Klimm, D ^a   Holzel T ^b   Wohlfart, A ^c  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c SICRYSTAL AG   (Germany)

Author keywords

A1. Etching; A1. Line defects; A2. Growth from vapour; B1. Potassium compounds; B2. Semiconducting silicon compounds

Indexed keywords

DEFECT DENSITY; DEFECT ETCHING; GROWTH FROM VAPOR; LINE DEFECTS;

CONCENTRATION (PROCESS); CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ETCHING; EUTECTICS; MASKS; MOLTEN MATERIALS; OXYGEN; POTASH; POTASSIUM COMPOUNDS; SINGLE CRYSTALS;

SILICON CARBIDE;

EID: 4444318635     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.098     Document Type: Article

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