HF chemical etching of SiO2 on 4H and 6H SiC

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 368-371

  Johnson, M B ^a   Zvanut, M E ^a   Richardson, Otha ^a  

^a UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; ETCHING; FILM GROWTH; SILICA; SUBSTRATES;

CHEMICAL ETCHING; PROFILOMETRY;

SILICON CARBIDE;

EID: 0033884914     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0079-3     Document Type: Article

References (12)

1. Z. Zheng, R.E. Tressler, and K.E. Spear, J. Electrochem. Soc. 137, 854 (1990).
2. C.E. Ramberg, G. Cruciani, E. Spear, R. Tresslar, and C.F. Ramberg, J. Amer. Ceram. Soc. 79, 2897 (1996).
3. R.W. Kee, K.M. Geib, C.W. Wilmensen, and D.K. Ferry, J. Vac. and Sci. Technol. 15, 1520 (1978).
4. Akira Suzuki, Hisashi Ashida, Nobuyuki Furui, Kazunobu Mameno, Hiroyuki Matsunami, J. Appl. Phys. 21, 579 (1982).
5. B. Horentz, H.-J. Michel, and J. Halbritter, J. Mater. Res. 9, 3088 (1994).
6. H. Tsuchida, I. Kamata, and K. Izumi, Appl. Surf. Sci. 177, 225 (1997).
7. V. Vathulyu, D.N. Wang, and M.H. White, Appl. Phys. Lett. 73, 2162, (1998).
8. T.L. Chu and R.B. Campbell, J. Electrochem. Soc. 112, 995 (1965).
9. F.N. Schwettman, R.J. Dexter, and D.F. Cole, J. Electrochem. Soc. 120, 1566 (1973).
10. N. Miyata, H. Watanabe, and M. Ichikawa, J. Appl. Phys. 77, 3923 (1998).
11. K. Vanheusden and A. Stesman, J. Appl. Phys. 69, 6656 (1991).
12. 2 layer thickness.