High aspect ratio Bosch etching of sub- 0.25 μm trenches for hyperintegration applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 4, 2007, Pages 1376-1381

  Wang, Xiaodong ^a   Zeng, Wanxue ^a   Lu, Guoping ^b   Russo, Onofrio L ^c   Eisenbraun, Eric ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b NANTONG UNIVERSITY   (China)

^c NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; INTEGRATED CIRCUITS; MEMS;

BOSCH ETCHING; HYPERINTEGRATION TECHNOLOGIES; INTEGRATED CIRCUIT DEVICES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 34547568471     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2756554     Document Type: Article

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