Ordered arrays of 〈100〉-oriented silicon nanorods by CMOS-compatible block copolymer lithography

Nano Letters

Volumn 7, Issue 6, 2007, Pages 1516-1520

  Zschech, Danilo ^a   Kim, Dong Ha ^b   Milenin, Alexey P ^a   Scholz, Roland ^a   Hillebrand, Reinald ^a   Hawker, Craig J ^c   Russell, Thomas P ^d   Steinhart, Martin ^a   Gösele, Ulrich ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b Ewha Womans University   (South Korea)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF MASSACHUSETTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCK COPOLYMER LITHOGRAPHY; CYLINDRICAL HOLES; NANOROD ARRAYS;

ASPECT RATIO; CMOS INTEGRATED CIRCUITS; LITHOGRAPHY; NANORODS; REACTIVE ION ETCHING; SILICON;

BLOCK COPOLYMERS;

NANOTUBE; POLY(METHYL METHACRYLATE); POLYSTYRENE DERIVATIVE; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; POLYMETHYL METHACRYLATE; POLYSTYRENES; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES;

EID: 34547260213     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl070275d     Document Type: Article

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