Ku-band AlGaN/GaN HEMT with over 30W

European Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007

Volumn , Issue , 2007, Pages 169-172

  Takagi, Kazutaka ^a   Kashiwabara, Yasushi ^a   Masuda, Kazutoshi ^a   Matsushita, Keiichi ^a   Sakurai, Hiroyuki ^a   Onodera, Ken ^a   Kawasaki, Hisao ^a   Takada, Yoshiharu ^a   Tsuda, Kunio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; ELECTRONICS INDUSTRY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES;

ALGAN/GAN HEMT; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; APPLICATIONS.; EUROPEAN; GAIN COMPRESSION; GATE PERIPHERY; KU-BAND; OPERATING CONDITIONS; OPERATING VOLTAGES; OUTPUT POWERS; POWER-ADDED-EFFICIENCY;

INTEGRATED CIRCUITS;

EID: 48149096053     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2007.4412675     Document Type: Conference Paper

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