Improved fabrication process for obtaining high power density AlGaN/GaN HEMTs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2003, Pages 298-300

  Thompson, R ^a   Kaper, V ^a   Prunty, T ^a   Shealy, J R ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); OHMIC CONTACTS; PASSIVATION; PHOTOLITHOGRAPHY; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

DRAIN VOLTAGE; POWER DENSITY; SCHOTTKY GATE CONTACTS; SCHOTTKY GATE METALLIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0348195824     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/gaas.2003.1252416     Document Type: Conference Paper

References (11)

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2. R. Vetury, N. Q. Zhang, S. Keller, and U. Mishra, "The Impact of Surface States on the DC and RF Characteristics of AlGaN/GaN HFETs," IEEE Transactions on Electron Devices, vol. 48, no. 3, pp. 560-566, Mar. 2001.
3. V. Tilak, B. Green, V. Kaper, H. Kim, T. Prunty, J. Smart, J. Shealy, and L. Eastman, "Influence of Barrier Thickness on the High-Power Performance of AlGaN/GaN HEMTs," IEEE Electron Device Letters, vol. 22, no. 11, pp. 504-506, Nov. 2001.
4. B. M. Green, K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, L. F. Eastman, "The Effect of Surface Passivation on the Microwave Characteristics of Undoped AlGaN/GaN HEMTs," IEEE Electron Device Letters, vol 21, no. 6, pp. 268-278, June, 2000.
5. V. Tilak, V. Kaper, R. Thompson, T. Prunty, H. Kim, J. Smart, J. R. Shealy, L. Eastman, "Correlation of pulsed IV measurements and high power performance of AlGaN/GaN HEMTs", Proceedings of International Symposium on Compound Semiconductors, 2002.
6. J. R. Shealy, V. Kaper, V. Tilak, T. Prunty, J. A. Smart, B. Green, L. F. Eastman, "An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer," Journal of Physics: Condensed Matter, vol. 14, pp. 3499-3509, 2002.
7. E. M. Chumbes, J. Smart, T. Prunty, J. R. Shealy, "Microwave Performance of AlGaN/GaN Metal Insulator Semiconductor Field Effect Transistors on Sapphire Substrates", IEEE Transactions on Electron Devices, vol. 48, no. 3, pp. 416-419, March 2001.
8. S. Karmalkar, and U. K. Mishra, "Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using a Field Plate," IEEE Transactions on Electron Devices, vol. 48, no 8, pp 1515-1521, Aug 2001.
9. L. Shen, S. Heikman, B. Moran, R. Coffe, N.-Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. DenBaars, and U. K. Mishra, "AlGaN/AlN/GaN High Power Microwave HEMT," IEEE Electron Device Letters, vol 22, no 10, pp. 457-459, Oct 2001.
10. A. J. Sierakowski and L. F. Eastman, "Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors," Journal of Applied Physics, vol. 86, no. 6, pp. 3398-3401, Sep 15, 1999.
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