A GaN HFET device technology on 3" SiC substrates for wireless infrastructure applications

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 706-709

  Green, B M ^a   Henry, H ^a   Selbee, J ^a   Lawrence, R ^a   Moore, K ^a   Abdou, J ^a   Miller, M ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN BIAS; POWER ADDED EFFICIENCY (PAE);

CODE DIVISION MULTIPLE ACCESS; GALLIUM NITRIDE; OPTIMIZATION; SILICON CARBIDE; TELECOMMUNICATION SYSTEMS; VOLTAGE MEASUREMENT;

GATES (TRANSISTOR);

EID: 33750911493     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249731     Document Type: Conference Paper

References (3)

1. R. Vetury, Yun Wei, D. Green, S. Gibb, T. Mercier, K. Leverich, P. Garber, M. Poulton, J. Shealy, "High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications", 2005 IEEE MTT-S Digest, pp. 487-490.
2. B.M. Green, V. Tilak, V. Kaper, J.A. Smart, J.R. Shealy, L.F. Eastman, "Microwave Power Limits of AlGaN/GaN HEMT's Under Pulsed Bias Conditions", Trans. Microwave Theory Tech., Feb. 2003, pp. 618-623.
3. C.E. Weitzel, P. Asbeck, "Advanced Technologies for Power Amplifiers", Workshop Notes, IEEE Int'l Microwave Symposium, Long Beach, Calif, June 12-17, 2005.