메뉴 건너뛰기




Volumn 3, Issue , 2004, Pages 1657-1659

Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band

Author keywords

MODFET integrated circuits; MODFET power amplifiers; MODFETs; Power amplifiers

Indexed keywords

CARRIER CONCENTRATION; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 4544349751     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (21)

References (6)
  • 1
    • 0036684655 scopus 로고    scopus 로고
    • State-of-the-art CW power density achieved at 26GHz by AlGaN/GaN HEMTs
    • August
    • C. Lee, H. Wang, J. Yang, L. Witkowski, M. Muir, M.A. Khan, and P. Saunier, "State-of-the-art CW power density achieved at 26GHz by AlGaN/GaN HEMTs" Electronics Letters, vol. 38, no. 16, pp. 924-925, August 2002.
    • (2002) Electronics Letters , vol.38 , Issue.16 , pp. 924-925
    • Lee, C.1    Wang, H.2    Yang, J.3    Witkowski, L.4    Muir, M.5    Khan, M.A.6    Saunier, P.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.