3.5-Watt AlGaN/GaN HEMTs and Amplifiers at 35 GHz

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 579-581

  Wu, Y F ^a   Moore, M ^a   Saxler, A ^b   Smith, P ^b   Chavarkar, P M ^a   Parikh, P ^a  

^a Cree Santa Barbara Technology Center   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUT-OFF FREQUENCIES; OUTPUT POWER;

AMPLIFIERS (ELECTRONIC); CARRIER CONCENTRATION; GAIN CONTROL; GALLIUM NITRIDE; MILLIMETER WAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0842288219     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Y.-F. Wu et al, IEDM Technical Digest, pp. 378-380, Washington, DC, Dec 2-5, 2001
2. V. Tilak et al, IEEE Electron Dev. Lett., Nov. 2001.
3. K. Kasahara et al, IEDM Technical Digest, pp.677-680, San Francisco, CA, Dec 8-11, 2002
4. J.J. Komiak et al, IEEE MTT-S Digest, pp.947-950, Anaheim, CA, June 13-19, 1999