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Volumn , Issue , 2006, Pages 722-725

A 500W push-pull AlGaN/GaN HEMT amplifier for L-band high power application

Author keywords

HEMT; High power; Power amplifier

Indexed keywords

ALUMINUM GALLIUM NITRIDE; BIAS VOLTAGE; GAIN MEASUREMENT; HIGH ELECTRON MOBILITY TRANSISTORS; NATURAL FREQUENCIES;

EID: 33750930174     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249735     Document Type: Conference Paper
Times cited : (57)

References (5)
  • 4
    • 34250338064 scopus 로고    scopus 로고
    • T. Kikkawa et al. Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion 2001. IEDM Technical Digest. International. Pages:25.4.1 - 25.4.4
    • T. Kikkawa et al. "Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion" 2001. IEDM Technical Digest. International. Pages:25.4.1 - 25.4.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.