C-band single-chip GaN-FET power amplifiers with 60-W output power

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 491-494

  Okamoto, Y ^a   Wakejima, A ^a   Matsunaga, K ^a   Ando, Y ^a   Nakayama, T ^a   Kasahara, K ^a   Ota, K ^a   Murase, Y ^a   Yamanoguchi, K ^a   Inoue, T ^a   Miyamoto, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

C band; FET; GaN; Power amplifier

Indexed keywords

CHIP SCALE PACKAGES; FIELD EFFECT TRANSISTORS; MICROPROCESSOR CHIPS; NETWORKS (CIRCUITS); POWER CONTROL; SEMICONDUCTING GALLIUM ARSENIDE;

C-BAND; GAN-FET AMPLIFIERS; INTERNAL MATCHING CIRCUITS; OUTPUT POWER;

POWER AMPLIFIERS;

EID: 33749236655     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516637     Document Type: Conference Paper

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