A GaN HEMT class F amplifier at 2 GHz with > 80 % PAE

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 96-99

  Schmelzer, David ^a,b   Long, Stephen I ^a,b  

^a IEEE

^b University of California   (United States)

Author keywords

Class F; GaN HEMT; Inverse F

Indexed keywords

ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HEALTH; OPTICAL DESIGN; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

CLASS-F; COMPOUND SEMICONDUCTOR (CS); DRAIN EFFICIENCY; FUNDAMENTAL FREQUENCY (FF); GAN HEMT; ON-STATE RESISTANCE (RON); OPERATING CONDITIONS; OUTPUT POWERS;

INTEGRATED CIRCUITS;

EID: 46149101459     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319923     Document Type: Conference Paper

References (7)

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