Advances in the deposition of microcrystalline silicon at high rate by distributed electron cyclotron resonance

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 6834-6838

  Roca i Cabarrocas, P ^a   Bulkin, P ^a   Daineka, D ^a   Dao, T H ^a   Leempoel, P ^b   Descamps, P ^b   Kervyn de Meerendre T ^b   Charliac, J ^b  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b Dow Corning SA Belgium   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; CYCLOTRONS; DEPOSITION RATES; DIRECT ENERGY CONVERSION; ELECTRONS; HYDROGEN; ION BOMBARDMENT; MAGNETISM; MICROFLUIDICS; MOLECULAR BEAM EPITAXY; NONMETALS; PLASMA APPLICATIONS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCALE (DEPOSITS); SILANES; SILICON; SOLAR ENERGY; SPUTTER DEPOSITION;

(100) SILICON; (I ,J) CONDITIONS; ATOMIC HYDROGEN; CRYSTALLINE FRACTIONS; DEPLETION MODES; DISTRIBUTED ELECTRON CYCLOTRON RESONANCE (DECR); ELSEVIER (CO); GROWTH PROCESSES; HIGH MICROWAVE; HIGH RATES; IN ORDER; PLASMA REACTORS; SHEATH POTENTIAL; SILICON FILMS; SILICON GROWTH; SOLAR-CELL APPLICATIONS; SUBSTRATE TEMPERATURE (ST);

MICROCRYSTALLINE SILICON;

EID: 45949088331     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.067     Document Type: Article

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