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Volumn 227-230, Issue PART 2, 1998, Pages 852-856

Low temperature growth of highly crystallized silicon thin films using hydrogen and argon dilution

Author keywords

Ion bombardment; Microcrystalline silicon; Substrate temperature

Indexed keywords

AMORPHOUS SILICON; ARGON; CRYSTALLINE MATERIALS; ELLIPSOMETRY; HYDROGEN; INTERFACES (MATERIALS); ION BOMBARDMENT; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SUBSTRATES; THIN FILMS;

EID: 0032066784     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00342-1     Document Type: Article
Times cited : (42)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.