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Volumn 227-230, Issue PART 2, 1998, Pages 852-856
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Low temperature growth of highly crystallized silicon thin films using hydrogen and argon dilution
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Author keywords
Ion bombardment; Microcrystalline silicon; Substrate temperature
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Indexed keywords
AMORPHOUS SILICON;
ARGON;
CRYSTALLINE MATERIALS;
ELLIPSOMETRY;
HYDROGEN;
INTERFACES (MATERIALS);
ION BOMBARDMENT;
SEMICONDUCTING SILICON;
SEMICONDUCTOR GROWTH;
SPECTROSCOPIC ANALYSIS;
SUBSTRATES;
THIN FILMS;
HYDROGEN PLASMA TREATMENT;
MICROCRYSTALLINE SILICON;
SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS;
SEMICONDUCTING FILMS;
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EID: 0032066784
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(98)00342-1 Document Type: Article |
Times cited : (42)
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References (15)
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