Deposition of SiO2 in integrated distributed electron cyclotron resonance microwave reactor

Thin Solid Films

Volumn 296, Issue 1-2, 1997, Pages 66-68

  Bulkin, Pavel ^a   Bertrand, Nicolas ^a   Drevillon, Bernard ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Deposition; Electron cyclotron resonance; Optical properties; Plasma enhanced CVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; FILM GROWTH; OPTICAL PROPERTIES; OXYGEN; PLASMA APPLICATIONS; PRESSURE EFFECTS; SILANES; THIN FILMS;

ELECTRON CYCLOTRON RESONANCE MICROWAVE REACTORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SILICA;

EID: 0031100930     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09380-7     Document Type: Article

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