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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 6 A, 2001, Pages 4176-4180

Crystallinity of thin silicon films deposited at low temperatures: Combined effect of biasing and structuring the substrate

(3) Birkholz, Mario a,b Conrad, Erhard a Fuhs, Walther a

a HAHN MEITNER INSTITUT (Germany)

b FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST (Germany)

Author keywords

Crystallinity of polycrystalline semiconductors; Electron cyclotron resonance chemical vapor deposition; Substrate biasing; Thin film structure and growth

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DEPOSITION; ELECTRON CYCLOTRON RESONANCE; GRAIN SIZE AND SHAPE; LOW TEMPERATURE OPERATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY; STRUCTURING; SUBSTRATE BIASING;

SEMICONDUCTING SILICON;

EID: 0035358656 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.4176 Document Type: Article

Times cited : (6)

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