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Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 964-967
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Large grain μc-Si:H films deposited at low temperature: Growth process and electronic properties
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Author keywords
Chemical vapor deposition; Conductivity; Ellipsometry; Microcrystallinity; Nanoparticles; Raman spectroscopy; Solar cells; Thin film transistors
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Indexed keywords
ARGON;
CHEMICAL VAPOR DEPOSITION;
DEPOSITION;
ELLIPSOMETRY;
FILM GROWTH;
PHYSICAL PROPERTIES;
RAMAN SPECTROSCOPY;
SILICON;
SOLAR CELLS;
THERMAL EFFECTS;
THIN FILM TRANSISTORS;
THIN FILMS;
CONDUCTIVITY;
CRYSTALLINITY;
CRYSTALLIZED FILMS;
GAS MIXTURES;
LARGE GRAIN;
MICROCRYSTALLINITY;
NANOPARTICLES;
SEMICONDUCTING FILMS;
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EID: 33745458944
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2005.10.060 Document Type: Article |
Times cited : (23)
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References (17)
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