A novel approach for the growth of μc-Si at a high rate over 3 nm/s

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 33-36

  Tanda, M ^a,b   Kondo, M ^a   Matsuda, A ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b FUJI ELECTRIC CO   (Japan)

Author keywords

High rate growth; Microcrystalline silicon; VHF plasma CVD

Indexed keywords

CATHODES; ELECTRODES; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; TRIODES;

MICROCRYSTALLINE SILICON;

SILICON;

EID: 0037416728     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01177-X     Document Type: Conference Paper

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