Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1913-1916

  Gueunier Farret, M E ^a   Bazin, C ^a   Kleider, J P ^a   Longeaud, C ^a   Bulkin, P ^b   Daineka, D ^b   Dao, T H ^b   Roca i Cabarrocas, P ^b   Descamps, P ^c   Kervyn de Meerendre, T ^c   Leempoel, P ^c   Meaudre, M ^d   Meaudre, R ^d  

^a UNIV PARIS SUD   (France)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^c Dow Corning SA Belgium   (Belgium)

^d UNIVERSITÉ LYON 1   (France)

Author keywords

Amorphous silicon; Defects; High deposition rates; Transport properties

Indexed keywords

DEFECTS; ELECTRODEPOSITION; ELECTRON CYCLOTRON RESONANCE; PLASMAS; TRANSPORT PROPERTIES;

HIGH DEPOSITION RATES; HYDROGENATED AMORPHOUS SILICON; SANDWICH GEOMETRIES;

AMORPHOUS SILICON;

EID: 33745444516     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.01.080     Document Type: Article

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