Very low temperature polycrystalline silicon films with very large grains deposited for thin film transistor applications

Applied Surface Science

Volumn 92, Issue , 1996, Pages 99-105

  Wang, K C ^a   Yew, T R ^a   Hwang, H L ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE OPERATIONS; PASSIVATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING GLASS; SEMICONDUCTOR GROWTH; SILICA; SUBSTRATES; SURFACES; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINE FRACTION; ELECTRON CYCLOTRON RESONANCE CHEMICAL VAPOR DEPOSITION; HYDROGEN DILUTION METHOD; HYDROGEN PASSIVATION; LOW TEMPERATURE POLYCRYSTALLINE SILICON FILMS; POLYCRYSTALLINITY; RAMAN SHIFT SPECTRA;

SEMICONDUCTING SILICON;

EID: 0030562520     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00210-3     Document Type: Article

References (4)

1. K.C. Hsu and H.L. Hwang, Appl. Phys. Lett. 61 (1992) 2075.
2. K.C. Hsu and H.L. Hwang, Mater. Res. Soc. Symp. Proc. 259 (1993) 67.
3. K.C. Hsu, H. Chang and H.L. Hwang, J. Appl. Phys. 73 (1993) 4841.
4. C.C. Tsai, R. Thompson, C. Doland, F.A. Ponce, G.B. Anderson and B. Wacker, Mater. Res. Soc. Symp. Proc. 118 (1988) 49.