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Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 276-280

Metastability studies in silicon thin films: From short range ordered to medium and long range ordered materials

(4) St'ahel, P a Hamma, S a Sladek P a,b Roca I Cabarrocas, P a

a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

b MASARYK UNIVERSITY (Czech Republic)

Author keywords

a Si; Metastability; Microcrystalline Si; Thin film

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; DEPOSITION; ELECTRON ABSORPTION; ENERGY GAP; HYDROGENATION; PHOTOCONDUCTIVITY; REACTION KINETICS; SEMICONDUCTING SILICON; THIN FILMS;

DARK CONDUCTIVITY; MICROCRYSTALLINE MATERIALS; POLYMORPHS;

SEMICONDUCTING FILMS;

EID: 0032066998 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(98)00269-5 Document Type: Article

Times cited : (32)

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