Dependence of EUV mask printing performance on blank architecture

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6921, Issue , 2008, Pages

  Jonckheere, Rik ^a   Hyun, Yoonsuk ^a,b   Iwamoto, Fumio ^a,c   Baudemprez, Bart ^a   Hermans, Jan ^a   Lorusso, Gian Francesco ^a   Pollentier, Ivan ^a   Goethals, Anne Marie ^a   Ronse, Kurt ^a  

^a IMEC   (Belgium)

^b Hynix Semiconductor Inc   (South Korea)

^c PANASONIC CORPORATION   (Japan)

Author keywords

Absorber; Capping layer; EUV lithography; EUV reticle; Full field; Imaging performance; Mask stack

Indexed keywords

ABSORBER; CAPPING LAYER; EUV RETICLE; FULL-FIELD; IMAGING PERFORMANCE;

EXTREME ULTRAVIOLET LITHOGRAPHY; LITHOGRAPHY; OPTICAL INSTRUMENTS; PHOTOMASKS;

PRINTING;

EID: 79959346121     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.771967     Document Type: Conference Paper

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